- 55 to + 175 c 10 to 40volts 6600watts smd transient voltage suppressors feat ures maximum r a tings and electrical characteristics @t a =2 5 c unless otherwise specified 1 of 4 mechanic al d ata ! ! polar i ty: cathode band or cathode notch ! marking: unidirectional ? device code and cathode band bidirectional ? device code only ! lead free: for halogen free and rohs / lead free version z ibo seno electronic engineering co., ltd. www.senocn.com do-218ab/smd-block sm8 s10 - sm8 s40a no te: (1) non-repetitive current pulse derated above t a = 25 c maximum ratings (t c = 25 c unless otherwise noted) p aramet er symbol v alue unit peak pulse power dissipation with 10/1000 s waveform with 10/10 000 s waveform p pp m 6600 5200 w p ower dissipation on infi nite heatsink at t c = 25 c ( fig. 1) p d 8.0 w peak pulse current w ith 10/1000 s waveform (1) i pp m se e ne xt tab l e a peak forward surge current 8.3 ms single half sine-wave i fs m 700 a operating jun c tion and storage temperature range t j , t stg th er m al characteristics (t c = 25 c un less ot he rwise noted) p ara meter symbol value unit typical thermal resistance, junction to case r jc 0.90 c/w hf cat h ode ano d e ano d e cat h ode l pea k power d issipation 66 00 w @10 x 1000 us pulse l glass passivated junction. l excellent clamping capability. l high surge capability l low leakage current l low forward voltage drop l available in uni - directional polarity only l t j = 175 c c apability suitable for high reliability and autom ot ive requirement l m eets iso7637 - 2 surge specification (varied by test condition) l case: void-free, do-218ab/smd-block aec-s101 qualified transfer molded plastic i - v c urve characteristics un i - dir ectional ! plas t ic case material has ul flammability classification rating 94v-o sm8s10-sm8s40a
2 of 4 z ibo seno electronic engineering co., ltd. www.senocn.com sm8 s10 - sm8 s40a sm8 s10 - sm8 s40a ra tings and c haracteristics curves (t a = 25 c unless otherwise noted) f i g ure 1. power derating curve figure 2. load dump power characteristics (10 ms exponential waveform) 0 2.0 4.0 6.0 8.0 0 50 100 150 200 po w e r dissipation (w) case temperat u re ( c) 0 2000 1000 3000 4000 5000 6000 25 50 75 100 125 150 175 load du mp p o w er ( w) case temperat u re ( c) f igure 3. pulse waveform figure 4. reverse power capability 0 50 100 150 t r = 10 s peak v alue i ppm half value - i ppm i pp 2 t d 0 10 20 30 40 t - time (ms) input p eak pulse current % t j = 25 c pulse width (t d ) is defined as the p oint w here the peak c urrent decays to 50 % of i ppm re v erse su rge p o w er ( w) 1000 10 000 10 100 pulse width (ms) - ? i pp exponential w a v ef or m figure 5. typical transi ent t hermal impedance t - pulse width ( s ) t ransient ther mal impedance (c/ w) 100 10 1 0.1 0.01 0.01 0.1 1 10 100 r ja r jc figure 6. typical junction cap acitance v wm - re v erse stand-off v oltage (v) 100 000 10 000 1000 10 c j - j unction capacitance (pf) 4035 30 252015 45 t j = 25 c f = 1.0 mhz v sig = 50 mvp-p measured at stand-off v oltage v wm measured at zero bias hf p ppm pea k pulse power dissipation - max power dissipation v rwm re verse stand - off voltage - maximum voltage that can be applied to tvs without operation v br bre a kdown voltage C maximum voltage that flows though the tvs at a specified current (i t ) v c cla m ping voltage C peak voltage measured across the tvs at a specified i ppm (pe a k impulse current) i r rev e rse leakage current C current measured at v r v f forw a rd voltage drop for uni - directional
3 of 4 z ibo seno electronic engineering co., ltd. www.senocn.com ty pe n umber reverse stand-off voltage breakdown voltage min. @i t b reakdo wn voltage max. @ i t t est current maximum clam ping voltage @i pp peak pu lse current reve rse leakage @v rmw (uni) v rmw (v) v br min (v) v br m ax (v) i t (m a) v c (v) i pp (a ) i r (u a) sm8s10 sm8s10a sm8s1 1 sm8s11 a 10 10 11 11 11.1 11.1 12.2 12.2 14.1 12.8 15.4 14.0 5.0 5.0 5.0 5.0 18.8 17.0 20.1 18.2 351 388 328 363 15.0 15.0 10.0 10.0 sm8s12 sm8s12a sm8s13 sm8s13a 12 12 13 13 13.3 13.3 14.4 14.4 16.9 15.3 18.2 16.5 5.0 5.0 5.0 5.0 22.0 19.9 23.8 21.5 300 332 277 307 10.0 10.0 10.0 10.0 sm8s14 sm8s14a sm8s15 sm8s15a 14 14 15 15 15.6 15.6 16.7 16.7 19.8 17.9 21.1 19.2 5.0 5.0 5.0 5.0 25.8 23.2 26.9 24.4 256 284 245 270 10.0 10.0 10.0 10.0 sm8s16 sm8s16a sm8s17 sm8s17a 16 16 17 17 17.8 17.8 18.9 18.9 22.6 20.5 23.9 21.7 5.0 5.0 5.0 5.0 28.8 26.0 30.5 27.6 229 254 216 239 10.0 10.0 10.0 10.0 sm8s18 sm8s18a sm8s20 sm8s20a 18 18 20 20 20.0 20.0 22.2 22.2 25.3 23.3 28.1 25.5 5.0 5.0 5.0 5.0 32.2 29.2 35.8 32.4 205 226 184 204 10.0 10.0 10.0 10.0 sm8s22 sm8s22a sm8s24 sm8s24a 22 22 24 24 24.4 24.4 26.7 26.7 30.9 28.0 33.8 30.7 5.0 5.0 5.0 5.0 39.4 35.5 43.0 38.9 168 186 153 170 10.0 10.0 10.0 10.0 sm8s26 sm8s26a sm8s28 sm8s28a 26 26 28 28 28.9 28.9 31.1 31.1 36.6 33.2 39.4 35.8 5.0 5.0 5.0 5.0 46.6 42.1 50.0 45.4 142 157 132 145 10.0 10.0 10.0 10.0 SM8S30 SM8S30a sm8s33 sm8s33a 30 30 33 33 33.3 33.3 36.7 36.7 42.2 38.3 46.5 42.2 5.0 5.0 5.0 5.0 53.5 48.4 59.0 53.3 123 136 11 2 124 10.0 10.0 10.0 10.0 sm8s36 sm8s36a sm8s40 sm8s40a 36 36 40 40 40.0 40.0 44.4 44.4 50.7 46.0 56.3 51.1 5.0 5.0 5.0 5.0 64.3 58.1 71.4 64.5 103 10.0 11 4 10.0 92.4 10.0 102 10.0 sm8 s10 - sm8 s40a sm8 s10 - sm8 s40a e lect rical characteristics (t c = 2 5 c unless otherwise noted) hf
package outline dimensions and pad layout s 4 of 4 z ibo seno electronic engineering co., ltd. www.senocn.com sm8 s10 - sm8 s40a sm8 s10 - sm8 s40a hf do-218ab/smd-block (mm)
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